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| sot-23 plastic-encapsulate diodes BAR43/a/c/s schottky barrier diode features z low current leakage z for general purpose switching applications BAR43 BAR43a BAR43c BAR43s marking:d95 marking: db1 m arking:db2 marking:da5 maximum ratings ( t a =25 unless otherwise noted ) symbol parameter value unit v rrm peak repetitive reverse voltage v rwm working peak reverse voltage 30 v v r(rms) rms reverse voltage 21 v i f(av) average rectified forward current 200 ma i fsm non-repetitive peak forward surge current @ t = 1s 0.75 a p d power dissipation 200 mw r ja thermal resistance from junction to ambient 500 /w t j junction temperature 1 2 5 t stg storage temperature -55~+150 electrical characteristics(t a =25 unless otherwise specified) parameter symbol test conditions min typ max unit reverse voltage v (br) i r =100 a 30 v reverse current i r v r =25v 0.5 a i f =2ma 0.26 0.33 i f =15ma 0.45 forward voltage v f i f =100ma 0.8 v reverse recovery time t rr i f = i r =10ma, i rr =0.1i r , r l =100 ? 5 ns sot-23 1 of 1 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification c,mar,2013
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